au.\*:("DUDECK I")
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DETERMINATION OF THE TEMPERATURE DEPENDENCE OF THE CAPTURE CROSS-SECTIONS OF THE GOLD ACCEPTOR LEVEL AND OF THE TEMPERATURE OF CURRENT FILAMENTS IN SILICON PIN DIODESDUDECK I; KASSING R.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 1; PP. 153-161; ABS. GER; BIBL. 18 REF.Article
THE INFLUENCE OF RECOMBINATION CENTER DATA ON THE I-V CHARACTERISTICS OF SILICON P+-I-N+ DIODES.DUDECK I; KASSING R.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 11; PP. 4786-4790; BIBL. 22 REF.Article
CURRENT OSCILLATIONS DUE TO FILAMENTARY DOUBLE INJECTION IN DIODES WITH DEEP LEVELSDUDECK I; KASSING R.1979; SOLID STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 4; PP. 361-365; BIBL. 15 REF.Article
GOLD AS AN OPTIMAL RECOMBINATION CENTER FOR POWER RECTIFIERS AND THYRISTORS.DUDECK I; KASSING R.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 1033-1036; BIBL. 11 REF.Article
NEW RESULTS OF THE TRANSIENT BEHAVIOUR OF SINGLE INJECTION SCLC DIODES WITH ONE DEEP LEVEL.DUDECK I; KASSING R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 489-493; ABS. ALLEM.; BIBL. 7 REF.Article
Erfahrungen beim Aufbau einer computerunterstützten Entwicklungsumgebung für Kfz-ElektronikDUDECK, I; HIRTH, T; RAITH, T et al.VDI-Berichte. 1989, Num 780, pp 153-168, issn 0083-5560Conference Paper